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半导体器件金属化热电徙动的温度测试

Temperature Test of Metallization In Semiconductor Devices
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摘要 在金属化布线电徙动试验中,采用金属薄膜电阻测温法精确测量了样品的局部温度,在环境温度为150℃,电流密度为3×106A/cm2和5×106A/cm2时,金属薄膜温度分别高于环境温度32.5℃和100℃;提出了扩散电阻测温法,在电徙动试验中精确测量并适时监控样品局部温度,从而实现了电流密度指数因子动态测试. The sample temperatures were tested in the metallization electromigration experiment. The tests show: that with a metal stripe under the same oven temperature of 150℃, When current density was 3 × 106A / cm2, the stripe temperature was 32.5℃higher than its ambient temperature; while the current density changed to 5 × 106A / cm2,the temperature of the stripe became 100℃ higher than its ambient temperature. Thus the temperature-test method of doped resistance is put forward to monitor and control accurately temperature of metal stripes, and a new dynamic current-ramp method for current density exponent is developed by this method.
出处 《北京工业大学学报》 CAS CSCD 1998年第4期63-68,共6页 Journal of Beijing University of Technology
关键词 半导体器件 电徒动 金属化布线 温度测试 semiconductor devices, reliablity, electromigration
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参考文献3

  • 1孙英华,Proceedings of the Third International Conference on Reliability Maintainability and Safety,1996年,485页
  • 2Jiang Tao,IEEE Trans Electron Dev,1996年,43卷,11期,1819页
  • 3Zhang Wei,IEEE International Reliability Proceeding,1995年,365页

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