摘要
在对体硅MOSFET高温泄漏电流研究的基础上,深入研究了SOI材料MOSFET泄漏电流的组成、解析式及高温模拟结果,并与体硅MOSFET进行了比较,证明薄膜SOI材料MOSFET的高温泄漏电流明显减小,因而在高温领域中有着广阔的应用前景。
The components,analytical formula and simulation results of leakage currnet for SOI MOSFETs at high temperature are deeply studied on the base of the investigation on the leakage current at high temperature for bulk Si MOSFETs. The results of the comparision between these two kinds 0f MOSFET prove that the leakage current of SOI MOSFETs with thin silicon film at high temperature decreases significantly,SOI MOSFETs might be widely used in the high temperature field in the future.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1998年第4期415-419,共5页
Research & Progress of SSE
基金
国家自然科学基金
