摘要
分析了AlGaAs／GaAsHBT的非线性失真产生的机理,应用Volterra级数理论计算了AlGaAs／GaAsHBT的三阶互调失真,理论值与实测值吻合较好,获得了AlGaAs／GaAsHBT的非线性失真量比较弱的结果,其值并不像人们认为的那样强,并解释了HBT高线性度的原因,这证明了AlGaAs／GaAsHBT在抗干扰方面的潜在能力。
We analyze nonlinear distortion in an AlGaAs/GaAs HBT,and calculate the third-order intermodulation distortion in the HBT using Volterra series.Its calculations are well concordant with its measurements,and the results are more weak,which are not as high as we have imagined. The reasons why the nonlinear distortion in the HBT is not strong are explained. It is verified that the AlGaAs/GaAs HBT is a very attractive candidate for linear amplification.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1998年第4期425-430,共6页
Research & Progress of SSE
