摘要
在活塞－圆筒式高压装置上研究了ＣｕＯ在４．５ＧＰａ内的ｐ－Ｖ关系，给出了它的状态方程、格临爱森参数γ０、体积模量Ｂ０以及Ｂ０的压力导数Ｂ０。在金刚石压砧装置上，采用我们建立的电阻、电容测量方法研究了ＣｕＯ在２２ＧＰａ内电阻、电容与压力的关系。实验结果表明，ＣｕＯ的电阻和电容在一些压力下都发生了突然的变化。这些变化可能与ＣｕＯ内部的电子结构和晶界处的结构状态变化有关。
The p V relationship for CuO at room temperature and up to 4.5GPa has been studied using the piston cylinder type measurement device,and its equation of state,Grüneisen parameter γ 0,bulk modulus B 0 and the first order pressure derivative B 0 have been given. And the resistance pressure and capacitance pressure relationships at room temperature and the pressures up to 22GPa have been studied in a diamond anvil cell using resistance and capacitance measurements.Experimental results show that several anomalous changes in resistance and capacitance occur.We conjecture that the change at about 5GPa may be caused by the change of the interior electronic structure (electronic structure transition),and the changes at other pressures may be related to the changes of structures of states in the crystal boundary.These results are valuable to understand the mechanism of superconductivity for the copper bearing oxide superconductors.
出处
《高压物理学报》
EI
CAS
CSCD
北大核心
1998年第4期254-257,共4页
Chinese Journal of High Pressure Physics
基金
国家自然科学基金
国家超导研究中心资助
关键词
高压
状态方程
电学性质
电子结构相变
氧化铜
high pressure,equation of state,electrical property,electronic structure transition.
