摘要
采用溶胶-凝胶工艺,用提拉法在玻璃基底上制备了ITO透明导电薄膜。使用四探针测试仪和紫外可见光分光光度计测量薄膜的方阻和透过率,并采用XRD、SEM等测试手段对薄膜的晶体结构、表面形貌进行了表征。结果表明,掺锡比例和热处理温度对薄膜的导电性具有重要影响,在掺Sn量为15%(原子分数比)、450℃热处理时薄膜的方阻最小;薄膜的透过率曲线随掺锡比例的增加向紫外方向移动。随着热处理时间、镀膜层数的增加,薄膜的方阻先减小,最后趋于一稳定值,在可见光范围内薄膜的透过率变化较小。
The Indium-tin oxide（ITO） films were prepared on glass substrate using sol-gel dip coating method. The sheet resistance and transmittance of the ITO films were measured by UV-VIS spectrometer and four-probe appara- tus. The XRD, SEM analysis techniques were used to determinate the structure and morphology of ITO films. It is proved that Sn^4＋ concentration and sintering temperature both have significant influence on the conductance of ITO films, and the sheet resistance is the lowest when sintering at 450 ℃ with 15 % Sn-doped concentration. Increas- ing the annealing time and film layers, the sheet resistance decreases and becomes a constant ultimately with the extension of time, and there is just a small variation in the average visible transmittance.
出处
《电子器件》
CAS
2010年第1期5-9,共5页
Chinese Journal of Electron Devices
