摘要
基于MOS管的阈值电压和载流子迁移率随温度的变化关系,设计了一种与CMOS工艺兼容的集成温度传感器。该温度传感器选用charted0.35μm工艺库,以Cadence进行电路图、版图设计,并以CadenceSpectre工具进行仿真,最后经流片、测试,实测与仿真对比结果显示:温度在25～105℃之间变化时,输出频率的变化范围为10.19～5.81MHz,且有较好的线性。此传感器对片上系统温度的监测、过热报警和振荡器频率漂移的补偿等均有重要的意义。
An integrated temperature sensor compatible with general CMOS process is designed based on the relationship between threshold voltage and carrier mobility in MOS transistor when temperature changes.Using 0.35 μm file of chartered,the circuit diagram and layout of this temperature sensor are designed by Cadence;simulation is done with Cadence Spectre.After being tapped-out and tested,the comparison results between testing and simulation show that the output frequency＇s range of variation is 10.19～5.81 MHz when the temperature changes between 25℃～105℃,and there is a good linearity.This temperature sensor is of great significance for on-chip system temperature monitoring,thermal alarm and oscillator frequency drift compensation.
出处
《传感技术学报》
CAS
CSCD
北大核心
2010年第1期38-42,共5页
Chinese Journal of Sensors and Actuators
