3Freeston IL. From Four Point to Impedance lmaging[J]. Engineering Science and Education Journal, 1997, 6(6): 245-254.
4Tay C J. Surface Roughness Measurement of SemiconductorWahrs Using a Modified Total Integrated Scattering Model[J]. Int. J. Light and Electron Optics, 2002, 113(7): 317-321.
5Kaminski A, Marchand J J, Laugier八I-V Method tO ExtractJunction Parameters with Special Emphasis on Low Series Resistanee[J]. Solid-State Electron, 1999, 43: 741-74533.
9Miles IK W, Hynes K M, Forbes L Photovohaic Solar Cells: anOverview of State-of-the-SArt Cen Development and Environmental Issues[J]. Progress in Crystal Growth and Characterization of Materials, 2005, 51(1-3): 1-42.
10Watanabe M, Tabuse D. Surface Contamination of BondingPads Incapable of An Wire Bonding[C]/ /IEEE/CPMT InL ElectronManuhctTeehmolSymp, 1998, 187-193.
4Harman G G.Wire bonding in microelectronics[J].McGraw-Hill,New York,1989.
5LUU T.NGUYEN.Optimization of copper wire bonding on Al-Cu metallization[J].IEEE transactions on components,packaging and manufacturing technology A,1995,18(2):423.
613 S RAMMINGER,TURKES P.Crack mechanism in wire bonding joints[J].Microelectronics reliability,1998,38:1301-1305.
7LIANG Z N,KUPER F G.A concept to relate wire binding parameters to bond ability and ball bond reliability[J].Microelectronics reliability,1998,38:1287-1291.
8Tomlinson W J,Roy V Winkle.Effect of heat treatment on the shear strength and fracture modes of copper wire thermosonic ball bonds to Al-1% Si device metallization[J].IEEE transactions on components,hybrids and manufacturing technology,1990,13 (3):587-591.
9Hyoung-Joon Kin,Joo yeon Lee.Effects of Au/Al intermetallic compound on copper wire and aluminum pad bondability[J].IEEE transactions on components and packaging technology,2003,26 (2):367-371.
10Srikanth N,Murali S.Critical study of thermosonic copper ball bonding.Thin solid film,2004 (462):339-345.
