摘要
本文提出一种新的切向喷射式MOCVD反应器,反应气体从均匀分布于内壁的切向进口喷管喷入反应器,尾气从位于反应器中心的上方或下方出口排出。通过切向喷射,使气体发生人工可控的螺旋流,在水平方向逐渐旋转与加速,从而补偿反应物浓度从边缘进口到中心出口的沿程损失,以便获得均匀的薄膜沉积。针对新的反应器设计,结合GaN的MOCVD生长进行了三维数值模拟,确定了喷管夹角、喷管数目和反应器高度对生长区的温场、流场和浓度场的影响,优化了参数组合,并与传统的垂直喷射式反应器作了对比。此外,这款新型反应器能够摆脱复杂的托盘旋转系统。
A novel MOCVD reactor with tangential inlets was proposed.In this reactor,the reactants were sprayed from the tangential inlets located equally around the sidewall,and the outlet was located in the center axis.Hence,a controllable vortex flow was obtained,and the reactants above the substrate were forced to rotate and accelerate.By compensating the loss of reactants running from inlets to outlet,it will help to get the uniform deposition.A 3-D numerical simulation of flow phenomena in the reactor was conducted.By varying the angle of the inlets,the number of the inlets and the height of the reactor,the influence on the fields of temperature,velocity and concentration were studied,and the performance of the reactor was compared to the traditional vertical reactor.Besides,this new reactor can run without complex rotation system.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2010年第1期267-271,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金(No.60376006)
