摘要
针对反射式负电子亲和势(NEA)GaN光电阴极量子效率的衰减以及不同波段对应量子效率衰减速度的不同,参照国外给出的NEAGaN光电阴极在反射模式下量子效率曲线随时间的衰减变化情况,利用GaN光电阴极铯氧激活后的表面模型[GaN(Mg):Cs]:O-Cs,结合量子效率衰减过程中表面势垒的变化,研究了反射式NEAGaN光电阴极量子效率的衰减机理.有效偶极子数量的减小是造成量子效率降低的根本原因,表面I,II势垒形状的变化造成了不同波段对应的量子效率下降速度的不同.
Aimming at the decay tendency of reflection-mode negative electron affinity（NEA） GaN photocathode and the different decay speeds of quantum efficiency corresponding to the different wave bands,and referring to the decay tendency of quantum efficiency curve provided by foreign authors for reflection-mode NEA GaN photocathode,the quantum efficiency decay mechanism for reflection-mode NEA GaN photocathode was studied.The surface model [GaN（Mg） ：Cs]：O-Cs for GaN photocathode after being activated with cesium and oxygen was used.And the change of surface barrier in the decay course of quantum efficiency was considered.The reduction of the effective dipole quantity is the basic reason causing quantum efficiency reduction.And it is the change of surface I,Ⅱ barrier shape that causes the difference of dropping speeds of quantum efficiencies corresponding to different wave bands.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2010年第4期2855-2859,共5页
Acta Physica Sinica
基金
国家自然科学基金(批准号:60871012
60701013)
河南省教育厅自然科学研究计划(批准号:2010C510009)资助的课题~~
关键词
负电子亲和势
GAN光电阴极
量子效率
表面势垒
negative elctron affinity
GaN photocathode
quantum efficiency
surface barrier
