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Uniformity of TiN Films Fabricated by Hollow Cathode Discharge 被引量:2

Uniformity of TiN Films Fabricated by Hollow Cathode Discharge
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摘要 Titanium nitride (TIN) films were deposited on AISI 304 stainless steel substrates using hollow cathode plasma physical vapor deposition (HC-PVD). Titanium was introduced by eroding the Ti cathode nozzle and TiN was formed in the presence of a nitrogen plasma excited by radio frequency (RF). The substrate bias voltage was varied from 0 to -300 V and the uniformity in film thickness, surface roughness, crystal size, microhardness and wear resistance for the film with a diameter of 20 mm was evaluated. Although the central zone of the plasma had the highest ion density, the film thickness did not vary appreciably across the sample. The results from atomic force microscopy (AFM) revealed a low surface roughness dominated by an island-like morphology with a similar crystal size on the entire surface. Higher microhardness was measured at the central zone of the sample. The sample treated at -200 V had excellent tribological properties and uniformity. Titanium nitride (TIN) films were deposited on AISI 304 stainless steel substrates using hollow cathode plasma physical vapor deposition (HC-PVD). Titanium was introduced by eroding the Ti cathode nozzle and TiN was formed in the presence of a nitrogen plasma excited by radio frequency (RF). The substrate bias voltage was varied from 0 to -300 V and the uniformity in film thickness, surface roughness, crystal size, microhardness and wear resistance for the film with a diameter of 20 mm was evaluated. Although the central zone of the plasma had the highest ion density, the film thickness did not vary appreciably across the sample. The results from atomic force microscopy (AFM) revealed a low surface roughness dominated by an island-like morphology with a similar crystal size on the entire surface. Higher microhardness was measured at the central zone of the sample. The sample treated at -200 V had excellent tribological properties and uniformity.
出处 《Plasma Science and Technology》 SCIE EI CAS CSCD 2010年第2期212-217,共6页 等离子体科学和技术(英文版)
基金 Supported by National Natural Science Foundation of China (Nos.10775036, 50773015) Program for New Century Excellent Talents in University in China City University of Hong Kong Strategic Research of China (No.7002138)
关键词 hollow cathode TiN film UNIFORMITY hollow cathode, TiN film, uniformity
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