摘要
介绍了一种采用DECR等离子体在低温下制备高质量SiO2薄膜的PECVD工艺。讨论了DECRPECVD工艺中气相O／Si原子比以及沉积速率对SiO2薄膜性能的影响。采用包括高能离子分析、椭偏仪、化学刻蚀以及红外吸收谱等物理和化学方法，对所镀SiO2薄膜的各种理化特性进行了分析和研究。在此基础上，还采用准静态I-U和高、低频C-U技术对优化工艺后的SiO2薄膜进行了电学性能测试，并在最后给出了采用DECRSiO2的薄膜晶体管的特性曲线。
A high quality SiO2 film was grown at rather low temperature by DECR PECVD. Influence on the films growth of different oxygen and silicon compositions in the gases' mixture and deposition rate in the DECR PECVD processes was studied.The physical and chemical properties of the films were also investigated with various techniques, including high energy ion analysis, eilipsometry, P-etching, and infrared spectrometry. The electrical characteristics of the optimized SiO2 films were evaluated by quasi-static I-U and high-low frequency C-U measurements in the SiO2 films in a MOS structure. The characteristics of the SOI-MOSFETs, fabricated of the DECR PECVD SiO2 films showed good quality of the SiO2 films.
出处
《真空科学与技术》
CSCD
北大核心
1998年第3期161-169,共9页
Vacuum Science and Technology
关键词
薄膜
分布式
电子回旋共振
二氧化硅
SiO_2 thin film, Distributed electron cyclotron resonance, Plasma enhanced chemical vapor deposition, Thin film transistor
