摘要
对射频磁控溅射生长的非晶态碲镉汞(a-MCT)薄膜在真空状态下进行退火,并通过X射线衍射(XRD)技术指出原生及低于125℃退火后的MCT薄膜均为非晶态。采用双体相关函数g(r)和电学测试系统研究了退火对a-MCT薄膜微结构和光敏性的影响。结果表明:经110℃、115℃和120℃退火后的a-MCT薄膜短程有序畴Rs由退火前的13.9分别增大至17.9、20.8和26.2;光敏性则由原来的1.17,分别增加至退火后的2.01、2.67和4.25。
Abstract： Amorphous HgCdTe （a-MCT） thin films deposited by RF magnetron sputtering technology are annealed in vacuum condition, and the amorphous structure of as-grown and annealed MCT films below 125℃ is identified by X-ray diffraction （XRD）. The effects of annealing on the microstructure and photosensitivity of a-MCT thin films by using pair correlation function and electrical testing system. The results show that after annealing at 110℃, 115℃ and 120℃, the values of Rs may be increased from 13.9 A to 17.9 A, 20.8 A and 26.2 A, respectively, and the polar value of photosensitivity may also be increased from 1.17 to 2.01, 2.67 and 4.25, respectively.
出处
《红外技术》
CSCD
北大核心
2010年第5期255-258,共4页
Infrared Technology
基金
国家自然科学基金项目(编号:60576069)
