摘要
半导体器件功率老化所面临的主要问题是结温控制。为了确保半导体器件老化的可靠性，对现有的连续脉冲结温控制方法进行讨论和改进，并给出相应的结温测试电路。理论分析和实验表明，凋整脉冲功率、脉冲占空比、脉冲频率，确能使器件结温达到老化的要求，并分析了脉冲功率、脉冲占空比、脉冲频率对结温的影响。最后在此基础上，提出一种多个分立器件使用单电源串行功率老化的方法。
The major problem of semiconductor devices＇ burn-in is junction temperature control. The existing method of continuous pulse for device junction temperature control has been discussed and adjusted to ensure the reliability of semiconductor devices＇ burn-in. A test circuit for junction temperature is introduced simulta- neously. Theoretical analysis and experiments demonstrate that junction temperature can indeed meet the requirements of burn in test by adjusting the pulse power, pulse duty cycle and pulse frequency. The influence of pulse power, pulse duty cycle and pulse frequency on junction temperature has also been analyzed. Finally, a new method using single-supply for multi discrete devices＇ burn-in is proposed.
出处
《实验技术与管理》
CAS
北大核心
2010年第5期46-49,79,共5页
Experimental Technology and Management
关键词
半导体器件
功率老化
结温控制
semiconductor devices
burn-in
junction temperature control
