摘要
采用等离子体增强化学气相沉积法(PECVD),在单晶硅衬底(100)上成功制备了不同生长工艺条件下的氮化硅薄膜。分别采用XP-2台阶仪、椭圆偏振仪等手段测试了薄膜的厚度、折射率、生长速率等参数。并采用原子力显微镜(AFM)研究了薄膜的表面形貌。结果表明,温度和射频功率是影响薄膜生长速率的主要因素,生长速率变化幅度可以达到230nm/min甚至更高。对于薄膜折射率和成分影响最大的是NH3流量,折射率变化范围可以达到2.7～1.86。分析得出受工艺参数调控的薄膜生长速率对薄膜的性质有重要影响。
Under different growth conditions,silicon nitride（SiNx）thin films were deposited successfully on Si（100）substrates by plasma-enhanced chemical vapor deposition（PECVD）.The thickness,refractive index and growth rate of the thin films were tested by profilometry and ellipsometer,respectively.The surface morphologies of the thin films were investigated using atomic force microscope（AFM）.The results show that the temperature and RF power play significant roles on the growth rate of thin films,whose magnitude of changes can reach 230 nm/min and even more.Ammonia flow is the most influence on the refractive index and composition of the thin films.The range of refractive index is from 2.7 to 1.86.The analysis shows that the growth rate of thin films,which is controlled by process parameters,has an important effect on the properties of the thin films.
出处
《微纳电子技术》
CAS
北大核心
2010年第5期267-272,303,共7页
Micronanoelectronic Technology
基金
国家重点基础研究发展规划(2006CB6049)
国家高技术研究发展规划(2006AA03A)
国家自然科学基金(60721063
60676057
60731160628
60820106003
60990311)
江苏省自然科学基金(BK2008019)
南京大学扬州光电研究院研发基金
关键词
等离子体增强化学气相沉积法
氮化硅薄膜
生长速率
折射率
硅衬底
plasma-enhanced chemical vapor deposition（PECVD）
SiNx membranes
growth rate
refractive index
Si substrate
