摘要
我们利用自行研制的ＵＨＶ／ＣＶＤ技术在直径３英寸的硅衬底上生长了锗硅外延层，并进行了实时掺杂生长．采用Ｘ射线双晶衍射和二次离子质谱技术确定了外延层的质量与组分，利用扩展电阻仪对外延层电阻率进行了表征，研究了生长特性和材料特性．由此获得生长速率及组分与源气体流量的关系曲线，发现生长速度随Ｇｅ组分的增加而降低，以氢气为载气的Ｂ２Ｈ６对锗硅合金的生长速率有促进作用．
Abstract Germanium silicon epitaxial layers on silicon substrates of 3 inch diameter are
successfully grown by ultra high vacuum chemical vapor deposition (UHV/CVD), and a real time
boron doping of epilayers is realized. Germanium silicon strained layers are characterized by
double crystal X ray diffraction (DCXRD), secondary ion mass spectroscopy (SIMS), and
spreading resistance (SPR). The germanium content in epilayers is homogeneous. The oxygen
concentration in epilayers is lower than that in substrates. No oxygen peak in the interface is
found. The germanium content curve and growth rate versus germane silane flow ratio are
plotted, they show that the growth rate is reduced with increasing of germanium content and the
growth rate of epilayers is obviously increased in the boron doped epilayers.
基金
国家自然科学基金
国家教委"跨世纪优秀人才"培养计划资助
关键词
锗硅材料
硅
CVD
外延生长
Chemical vapor deposition
Epitaxial growth
