摘要
测量了３种不同生长方法（加速坩埚旋转布里奇曼法、固态再结晶法和改进的布里奇曼生长大直径晶体法）制备的长波红外蹄镉汞晶体（块晶）载流子寿命的温度变化关系，与窄禁带半导体载流子复合机构的理论计算结果比较表明，优质晶体中是以带间碰撞复合为主。
Minority carrier Iifetime have been measured as a function of temperature in the 80～ 300 K range for n-type Hg1-xGdxTe LWIR materials grown by accelerated crucibel roration(ACRT) Bridgman technique, solid state recrystal and improved Bridgman-grown.The recombination mecha- nism is studed on the basis of tempemture dependence of lifetime, it can be explained by band-to- band Auger recombination in high-quality crystal.
出处
《红外技术》
CSCD
北大核心
1999年第2期31-34,共4页
Infrared Technology
