摘要
将组合技术和离子束技术结合起来，用于硅基发光材料的研究。用组合离子束技术在硅 基材料上制备了６４个直径为２ｍｍ的单元──材料芯片，并对硅基材料芯片各单元进行了卢瑟辐 背散射、质子弹性散射和扫描阴极射线发光特性分析。
The combinatorial ion beam implantation technique has been applied to synthesize a silicon-based material chip with 64 samples of 2 mm diameter size on it. The Rutherford backscattering spectrometry and photon elastic scattering were used to analyse the samples on the chip.The depth-resolved cathodoluminescence measurement of the samples has provided some clues for optical properties correlated with the impurity distribution in the material.
出处
《核技术》
CAS
CSCD
北大核心
1999年第2期65-68,共4页
Nuclear Techniques
基金
国家自然科学基金
中国博士后基金
上海博士后基金
中国科学院核分析技术开放实验室资助
