摘要
The chaotic behaviours in the p-Ge photoconductor system are studied by changing the photo-excitation coefficient and the routes and parameter conditions are given for chaos generation in this system. A scheme for controlling chaos in the p-Ge photoconductor is presented by adding an ac bias current. Numerical simulations show that this scheme can be effectively used to control chaotic states into stable period states for this system. Moreover, the different period states with diifferent period numbers can be obtained by appropriately adjusting the amplitude, frequency, and initial phase of the additional ac current.
The chaotic behaviours in the p-Ge photoconductor system are studied by changing the photo-excitation coefficient and the routes and parameter conditions are given for chaos generation in this system. A scheme for controlling chaos in the p-Ge photoconductor is presented by adding an ac bias current. Numerical simulations show that this scheme can be effectively used to control chaotic states into stable period states for this system. Moreover, the different period states with diifferent period numbers can be obtained by appropriately adjusting the amplitude, frequency, and initial phase of the additional ac current.
基金
Project supported by Scientific and Technological Development Plan Program of Jilin Province,China (Grant No.20090309)
