摘要
忆阻器是一类具有电阻记忆行为的非线性电路元件,被认为是除电阻、电容、电感外的第四个基本电路元件。综述了忆阻器和忆阻系统概念的产生与发展过程,实现忆阻功能的几种模型与机理,如边界迁移、自旋阻塞、绝缘体-金属转变、丝导电、氧化还原反应等。阐述了忆阻器和忆阻系统在模型分析、生物记忆行为仿真、基础电路和器件设计方面的应用前景。
Memristor is a circuit element, which behaves like a nonlinear resistor with memory, and is demonstrated as the fourth fundamental circuit element in addition to resistor, capacitor and inductor. The definitions and development of memristor and memristive systems, with several models and mechanism such as botmdary drift, spin blockade, insulator-metal transition, filament conduction and redox reaction, are reviewed. The applications of memristor and memristive systems on model analysis, simulation of bionic memorizing behavior, design of basic circuit and devices are also introduced.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2010年第4期78-82,共5页
Electronic Components And Materials
基金
国家"863"计划资助项目(No.2007AA3Z449)
国家自然科学基金资助项目(No.90922025
No.0774087)
关键词
忆阻器
忆阻系统
综述
忆阻机理
应用
memristor
memristive system
review
memristive mechanism
applications
