摘要
针对抗辐照设计中特殊非规则条栅栅结构的CMOS/SOI器件,分析其SPICE模型参数,对源漏电阻、电容、体接触电阻等其他模型参数作出调整,建立非标准器件的完整精确模型。设计制作了多种不同非标准栅结构的PD CMOS/SOI晶体管,并采用新的SPICE模型参数来模拟这些器件。模拟数据和试验数据具有很好的一致性,证明所建立的模型具有较高精度,适合抗辐照电路设计应用。
SPICE model parameters for CMOS/SOI devices with nonrectangular gate in radiation hardened design were analyzed.Adjustments were made on other model parameters,such as source/drain resistance,capacitance and body contact resistance,and a complete and accurate model was established for those nonrectangular gate devices.PD CMOS/SOI transistors with different nonrectangular gate were designed and simulated with the new SPICE model parameters.Simultated results were in accordance with experimental data,which indicated that the proposed model had higher accuracy and was applicable for radiation hardened circuits.
出处
《微电子学》
CAS
CSCD
北大核心
2010年第3期411-415,共5页
Microelectronics
