摘要
研究开发了0.4μm PD CMOS/SOI工艺,试制出采用H栅双边体引出的专用电路。对应用中如何克服PD SOI MOSFET器件的浮体效应进行了研究;探讨在抑制浮体效应的同时减少对芯片面积影响的途径,对H栅双边体引出改为单边体引出进行了实验研究。对沟道长度为0.4μm、0.5μm、0.6μm、0.8μm的H栅PD SOI MOSFET单边体引出器件进行工艺加工及测试,总结出在现有工艺下适合单边体引出方式的MOSFET器件尺寸,并对引起短沟道PMOSFET漏电的因素进行了分析,提出了改善方法;对提高PD CMOS/SOI集成电路的设计密度和改进制造工艺具有一定的指导意义。
A 0. 4-μm partially depleted （PD） CMOS/SOI process was developed, and an ASIC with H-gate bilateral body contact was fabricated using this technology. H-gate unilateral body contact was investigated to reduce adverse impact on chip area while suppressing floating-body effect in PD SOI MOSFET. H-gate PD SOl MOSFETs with channel lengths of 0. 4μm, 0. 5μm, 0. 6 μm and 0. 8μm were fabricated, respectively, using unilateral body contact. MOSFET sizes suitable for unilateral body contact using existing process were worked out. Methods to reduce leakage current of PMOSFETs were proposed, based on analysis of leakage current of short-channel MOS- FET.
出处
《微电子学》
CAS
CSCD
北大核心
2010年第3期448-453,共6页
Microelectronics
