摘要
文章的主要目的是研究第三代半导体AlGaN/GaN功率管内匹配问题。以设计Ku波段20WGaN器件为例,研究了内匹配电路的设计、合成以及内匹配电路的测试,实现了GaN功率HEMT在Ku波段20W连续波输出功率的内匹配电路,并使整个电路的输入、输出电路阻抗提升至50Ω。最终所研制的AlGaN/GaNKu波段内匹配功率管在11.8GHz～12.2GHz频带内,输出功率大于20W。在12GHz功率增益大于5dB,功率附加效率29.07%,是目前国内关于GaN功率器件在Ku波段连续波输出的最高报道。
The paper is to research the AlGaN/GaN internal matching technology.To design the 20W Ku band GaN HEMT as an example,we research the design of the internal matching circuit,power combining and the test of internal matching circuit,finally we realized the internal matching circuit of a 20W Ku band GaN power HEMT,and the input/output circuit impedance is upgraded to 50Ω.The internal matching AlGaN/GaN HEMT demonstrates an output C.W.power of more than 20W across the band of 11.8GHz～12.2GHz.And the maximum C.W.output power of 21.38W with a power gain of over 5dB with PAE of 29.07% at 12GHz.This is the highest output power AlGaN/GaN HEMT at Ku-band in China to the best of our knowledge.
出处
《电子与封装》
2010年第6期23-25,38,共4页
Electronics & Packaging
