摘要
以Ga2O3为主要原料,通过氨气氮化反应合成了单相GaN粉体。利用X射线衍射(XRD)、扫瞄电镜(SEM)和荧光光谱(PL)分析在900～1050℃范围内,氮化温度和时间对产物的影响。结果表明:氮化温度在920℃以上时能够生成纯度较高的六方铅锌矿型GaN粉体,反应温度达性能优异。反应产物初始的平板和柱状结构显示了系统反应开始为气-固机制(V-S),但随时间的延长转变为到1000℃时,合成的粉体具有良好的结晶性能;当反应温度为1000℃,氮化时间为1.5h时,所得样品发光以分解-重结晶为主导的合成机制,该机制使得粉体颗粒细化,并随着反应温度的提高以及氮化时间的延长,细化效果更加明显。
Single phase gallium nitride （GaN） powders were produced by ammoniating reactions using Ga2O3 powders as raw material.The effect of reaction temperature and time on the properties of as-synthesized GaN between 900 ℃ and 1050 ℃ was analyzed by X-ray diffraction （XRD）,scanning electron microscopy （SEM） and photoluminescence （PL） measurement,respectively.The results show that the hexagonal wurtzite GaN powders appear above 920 ℃.The samples fabricated at 1000 ℃ have quite well crystallization,and the samples ammoniated for 1.5 h at this temperature have quite well luminescent properties.Besides,the sheet-like and columnar grains suggest that the growth of GaN crystals are attributed to the V-S mechanism at first stage,and with the ammoniating time prolonged,it is transformed to a decomposition-re-crystallization process,which make the GaN powders thinner.The effect are significant with further increasing of reaction temperature and time.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2010年第3期638-643,共6页
Journal of Synthetic Crystals
基金
国家自然科学基金(No.50802057)
陕西科技大学科研启动基金
关键词
GAN
热分解
重结晶
GaN
thermal decomposition
re-crystallization
