摘要
为了减少集成电路密码芯片工作时的电磁信息泄漏,设计具有防护能力的加密芯片。在研究CMOS集成电路电磁辐射原理的基础上,分析了电磁辐射产生数据相关性的机理。以电偶极子为模型,简化了电磁计算的方法,对基本的CMOS电路工作过程进行分析。采用TSMC 0.18工艺设计CMOS反相器,并对该反向器进行电磁辐射仿真。建立评估模型并对金属层电磁辐射的信息泄漏进行评估。结果表明,电路工作时NMOS金属层、PMOS金属层和输出线的金属层产生的电磁辐射均会导致信息泄漏,长度相等时,输出线金属层的电磁信息泄漏更强。
In order to reduce electromagnetic information leakage of IC cipher chip,design encryption chip which has defending ability.The principles of electromagnetic radiation produced by IC is analyzed.Study the mechanism of data correlation caused by electromagnetic emissions on the basis of pre-principles.At the same time,the model which computes the value of EM field of electric dipole is predigested.The work process of basic CMOS circuit is analyzed in detail.According to TSMC0.18 design rule,a CMOS inverter is designed and electromagnetic radiation of the inverter is simulated and a evaluation model is established to evaluate the degree of electromagnetic information leakage of metal layer.Results indicate that the metal layer of NMOS,PMOS and output line of inverter will bring electromagnetic radiation when circuit is working and cause information leakage.Electromagnetic information leakage of the metal layer of transmission line is stronger than PMOS and NMOS with the same length.
出处
《计算机技术与发展》
2010年第7期156-159,共4页
Computer Technology and Development
基金
国家863计划项目(2007AA01Z454)
关键词
CMOS集成电路
金属层
电磁信息泄漏
数据相关性
电偶极子
CMOS integrate circuits
metal layer
electromagnetic information leakage
data correlation
electric dipole
