摘要
采用一次阳极氧化法,通过电解P型<100>晶向Si衬底上的高纯Al膜,在40V下,0.3M草酸中制备了Si基anodic aluminum oxide(AAO)模板。在Si基Al氧化过程中,通过电流密度随时间实时变化曲线的分析,研究了Si基AAO的生长机理。实验发现,电解液温度对Si基AAO制备的影响很大,在30℃下的氧化速度是在10℃下的5倍多。
The anodic aluminum oxide（AAO） template on silicon substrate is fabricated by one-step anodization of pure aluminum layer deposited onto p-type silicon 100 substrates in 0.3 M oxalic acid solution at DC 40 V.The current density-time real time curves in the process of anodization of Al layer on silicon substrate are gathered and analyzed.And,the growth mechanism of AAO on silicon substrate is studied.It indicates that the real-time monitoring of current density is important for the fabrication of AAO on silicon substrate.In addition,the temperature of electrolyte is closely connected with the growth rate of AAO on silicon substrate,the growth rate at 30 ℃ is five times more than the rate at 10 ℃.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2010年第5期706-709,共4页
Journal of Optoelectronics·Laser
基金
天津市自然科学基金资助项目(09JCYBJC04400)
关键词
Si基AAO
氧化时间
电解液
温度
生长机理
anodic aluminum oxide（AAO） on silicon substrate
anodization time
electrolyte
temperature
growth mechanism
