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表面修饰的ZnPc薄膜晶体管性能研究 被引量：2

Investigation of ZnPc thin film transistors with surface modified insulators
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摘要 以热生长的SiO2作为栅绝缘层,酞菁锌(ZnPc)作为有源层,研究了具有十八烷基三氯硅烷(OTS,C18H37SiCl3)/SiO2双绝缘层结构的有机薄膜晶体管(OTFT)。实验表明,采用OTS可以有效地降低SiO2栅绝缘层的表面能并改善表面的平整度,器件的场效应迁移率提高了3.5倍,漏电流从10-9A降到10-10A,阈值电压降低了5 V,开关电流比从103增加到104。结果显示,具有OTS/SiO2双绝缘层的器件结构能有效改进OTFT的性能。 An organic thin-film transistor（OTFT） with OTS/SiO2 bilayer gate insulators between gate insulator and source/drain electrodes is investigated.Thermal grown SiO2 layer is used as the OTFT gate dielectric;Zinc phthalocyanine（ZnPc） is used as an active layer.The octadecyltrichlorosilane（OTS） is used to reduce the surface energy of the SiO2 gate dielectric and significantly improve the flat level of the devices.This OTS/SiO2 bilayer gate insulator increases the field-effect mobility by 3.5 times,reduces the leakage current from 10-9 to 10-10 A and the threshold voltage by 5 V,and improves the on/off ratio from 103 to 104.The results indicate that using double-layer of insulator is an effective way to improve OTFT performance.
作者 白钰
机构地区 五邑大学数理系功能材料研究所
出处 《光电子．激光》 EI CAS CSCD 北大核心 2010年第6期856-860,共5页 Journal of Optoelectronics·Laser
关键词 SIO2 修饰 十八烷基三氯硅烷(OTS) 晶体管 SiO2 modification octadecyltrichlorosilane（OTS C18H37SiCl3） transistor
分类号 TN386.2 [电子电信—物理电子学]
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参考文献12

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共引文献3

同被引文献23

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光电子．激光
2010年 第6期

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