摘要
以无水乙醇为溶剂、柠檬酸为分散剂,用超声分散技术配制Ni纳米粒子分散液;将分散液用旋涂的方法在GaN基发光二极管(LED)的ITO电流扩展层上制备单层Ni纳米粒子掩膜,采用ICP(inductively coupledplasma)干法刻蚀技术在ITO层上制作出表面粗化的结构。在20 mA工作电流下,与普通GaN基LED相比,这种ITO表面粗化的GaN基LED芯片发光强度提高了30%,并且对器件的电性能影响很小。结果表明,该表面粗化技术是一种工艺简单、成本低和能有效提高LED发光效率的方法。
The dispersion of nickel nanoparticles was prepared by ultrasonic treatment using absolute ethyl alcohol as solvent and citric acid as dispersion medium,respectively.Then the dispersion was spin-coated on the indium tin oxide（ITO） current spreading layer of GaN-based light-emitting diodes（LEDs） to form a single-layer nickel nanoparticle,and the ITO surface was textured using inductively coupled plasma（ICP） etching technology by using nickel nanoparticles as the etching mask.The light output power of ITO surface-textured GaN-based LED was enhanced by about 30% compared with that of conventional LED without textured ITO layer while the electrical characteristics was little damaged.The results indicate that the technique is a simple,low-cost and effective surface-textured method to enhance the light output power of GaN-based LED.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2010年第7期966-969,共4页
Journal of Optoelectronics·Laser
基金
广东省关键领域粤港合作重点突破资助项目(0812150300001)
留学回国人员科技活动资助项目
广东省自然科学基金资助项目(8521063101000007)
广东省科技计划资助项目(2008B010200004)
华南师范大学学生课外科研重点课题资助项目(09XXKC03)
