摘要
ZnO薄膜可以具有压电性和透光导电性两种不同性质，取决制备中的不同沉积条件。本文介绍采用微波电子回旋共振（ECR）等离子体反应溅射制备ZnO薄膜的实验装置和方法。在氢气流量是4cm3／s，氧气流量是15cm3／s，基片温度250℃时沉积出高度C轴择优取向的ZnO膜，其取向分散度为2．5°，偏离度为0．5°。在氢气流量是6cm3／s，氧气流量是0．5cm3／s，基片温度150°时沉积的ZnO膜其可见光透率85％，电阻车3．27×10－3Ω·cm。
The ZnO film may show piezoelectric of transparent conducting characteristics which depend on the difference of deposition condition. This paper introduces the apparatus and methods used to prepare ZnO thin film with microwave ECR plasma reaction sputtering system. The ZnO films with well C-axis orientation (σ~ 2. 5°,m = 0. 5°)were deposited at Ar flow rate of 4 cm3/s, oxygen of 15 cm3/s and substrate temperature of 250℃. The transparent conducting ZnO films(Tv-85 %,ρ~ 3. 27 × 10-3 Ω. cm) were depotted at Ar flow rate of 6 cm3/s, oxygen of 0. 5 cm3/s and substrate temperature of 150℃.
基金
国家自然科学基金!19175046
关键词
薄膜
压电性
反应溅射
电子回旋共振
氧化锌
ZnO film
ECR technique
piezoelectricity
transparent conductibility
reactive sputtering
