摘要
We carry out a thermal storage research on GaN HEMT at 350℃for 48 h,and a recess phenomenon is observed in the low voltage section of Schottky forward characteristics.The decrease of 2DEG density will be responsible for the recess phenomenon.Because the conventional method is not suitable for this kind of curve,a revised approach is presented by analyzing the back-to-back Schottky junction energy band to extract Schottky parameters, which leads to a consistent fit effect.
We carry out a thermal storage research on GaN HEMT at 350℃for 48 h,and a recess phenomenon is observed in the low voltage section of Schottky forward characteristics.The decrease of 2DEG density will be responsible for the recess phenomenon.Because the conventional method is not suitable for this kind of curve,a revised approach is presented by analyzing the back-to-back Schottky junction energy band to extract Schottky parameters, which leads to a consistent fit effect.
基金
Project supported by the National Natural Science Foundation of China(Nos.60890191,60976059)
the National Basic Research Program of China(No.2010CB327500).
