摘要
This paper presents a new cleaning process for particle and organic contaminants on polished silicon wafer surfaces.It combines a non-ionic surfactant with boron-doped diamond（BDD） film anode electrochemical oxidation. The non-ionic surfactant is used to remove particles on the polished wafer＇s surface,because it can form a protective film on the surface,which makes particles easy to remove.The effects of particle removal comparative experiments were observed by metallographic microscopy,which showed that the 1%v/v non-ionic surfactant achieved the best result. However,the surfactant film itself belongs to organic contamination,and it eventually needs to be removed.BDD film anode electrochemical oxidation（BDD-EO） is used to remove organic contaminants,because it can efficiently degrade organic matter.Three organic contaminant removal comparative experiments were carried out：the first one used the non-ionic surfactant in the first step and then used BDD-EO,the second one used BDD-EO only,and the last one used RCA cleaning technique.The XPS measurement result shows that the wafer＇s surface cleaned by BDD-EO has much less organic residue than that cleaned by RCA cleaning technique,and the non-ionic surfactant can be efficiently removed by BDD-EO.
This paper presents a new cleaning process for particle and organic contaminants on polished silicon wafer surfaces.It combines a non-ionic surfactant with boron-doped diamond（BDD） film anode electrochemical oxidation. The non-ionic surfactant is used to remove particles on the polished wafer＇s surface,because it can form a protective film on the surface,which makes particles easy to remove.The effects of particle removal comparative experiments were observed by metallographic microscopy,which showed that the 1%v/v non-ionic surfactant achieved the best result. However,the surfactant film itself belongs to organic contamination,and it eventually needs to be removed.BDD film anode electrochemical oxidation（BDD-EO） is used to remove organic contaminants,because it can efficiently degrade organic matter.Three organic contaminant removal comparative experiments were carried out：the first one used the non-ionic surfactant in the first step and then used BDD-EO,the second one used BDD-EO only,and the last one used RCA cleaning technique.The XPS measurement result shows that the wafer＇s surface cleaned by BDD-EO has much less organic residue than that cleaned by RCA cleaning technique,and the non-ionic surfactant can be efficiently removed by BDD-EO.
