摘要
通过激活能测试装置测量PECVD沉积的磷掺杂n型微晶硅薄膜,并对不同掺杂浓度、不同沉积温度下制备的样品的激活能进行了分析研究。结果表明:对磷掺杂微晶硅薄膜,激活能较本征薄膜小,以meV为单位,在晶化较好的情况下,激活能和晶化率的关系不明显,以杂质效应对电导的影响为主。
The phosphorus-doped microcrystalline silicon thin films were deposited by plasma-enhanced chemical vapor deposition （PECVD）, the activation energy of thin films were measured by activation energy testing equipment. The activation energy of samples with different doping concentration and different depositing temperature were studied. The results showed that： the activation energy of phosphorus-doped microcrystalline silicon thin films lesser than intrinsic films. The unit of activation energy is meV. Crystalline volume fractions have little influence on activation energy when thin films have a good crystalline volume fraction, impurity effect plays an important role on the conduction.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2010年第B06期135-138,共4页
Journal of Synthetic Crystals
关键词
PECVD
微晶硅
电导
激活能
PECVD
microcrystalline silicon
conduction
activation energy
