摘要
The structural un-uniformity of microcrystalline silicon, thin film, amorphous incubation layerc-Si：H films prepared using very high frequency plasma-enhanced chemical vapour deposition method has been investigated by Raman spectroscopy, spectroscopic ellipsometer and atomic force mi- croscopy. It was found that the formation of amorphous incubation layer was caused by the back diffusion of SiH4 and the amorphous induction of glass surface during the initial ignition process, and growth of the incubation layer can be suppressed and uniform μc-Si：H phase is generated by the application of delayed initial SiH4 density and silane profiling methods.
The structural un-uniformity of microcrystalline silicon, thin film, amorphous incubation layerc-Si：H films prepared using very high frequency plasma-enhanced chemical vapour deposition method has been investigated by Raman spectroscopy, spectroscopic ellipsometer and atomic force mi- croscopy. It was found that the formation of amorphous incubation layer was caused by the back diffusion of SiH4 and the amorphous induction of glass surface during the initial ignition process, and growth of the incubation layer can be suppressed and uniform μc-Si：H phase is generated by the application of delayed initial SiH4 density and silane profiling methods.
基金
Project supported by the State Key Development Program for Basic Research of China(Grant No.2006CB202601)
the Natural Science Research Program of the Education Bureau of Henan Province of China(Grant No.2009A140007)
