期刊文献+

纤锌矿GaN/AlN量子阱中的极化子 被引量:2

Polarons in a Wurtzite GaN/AlN Quantum Well
下载PDF
导出
摘要 采用Lee-Low-Pines(LLP)变分法,讨论了纤锌矿(闪锌矿)GaN/AlN无限深量子阱材料中电子-定域长波光学声子相互作用,给出纤锌矿量子阱中自由极化子的基态能量、第一激发态能量和跃迁能量随阱宽的变化关系.数值计算中考虑了纤锌矿材料的各向异性,结果表明,极化子能量随阱宽的增大而减小,当阱宽较宽时,趋近于体材料的三维值.纤锌矿(闪锌矿)GaN/AlN量子阱材料中,电子-定域长波光学声子相互作用对极化子能量的贡献比闪锌矿GaAs/AlAs量子阱材料中的相应值大得多.因此,讨论GaN/AlN量子阱材料中电子态问题时应考虑电子-定域声子相互作用. The interaction between an electron and confined-Longitudinal-Optical phonons in a wurtzite(zinc-blende) GaN/AlN quantum well is studied by using the Lee-Low-Pines(LLP) variational method.The ground-state energy,first excited-state energy and the transition energy of the free polaron in wurtzite material QW are calculated as a function of well width.The effect of anisotropy of the wurtzite materials has been considered in the calculation.The results show that the polaron energy decreases with increasing the well width and finally approaches to the bulk value of GaN.The contributions of the electron-phonon interaction to the energy of polaron in a wurtzite GaN/AlN quantum well are greater than that in a GaAs/AlAs quantum well.Therefore,the contribution of electron-phonon interaction should be considered for the discussion of the election states in wurtzite GaN/AlN quantum well.
出处 《内蒙古师范大学学报(自然科学汉文版)》 CAS 2010年第4期372-376,381,共6页 Journal of Inner Mongolia Normal University(Natural Science Edition)
基金 国家自然科学基金资助项目(10964007) 内蒙古自然科学基金资助项目(2009MS0110) 内蒙古师范大学科研基金项目(CXJJS08006)
关键词 纤锌矿 量子阱 极化子 电子-声子相互作用 跃迁能量 wurtzite quantum well polaron electron-phonon interaction transition energy
  • 相关文献

参考文献29

  • 1London R.The Raman Effect in Crytals[J].Adv Phys,1964,13:423-482.
  • 2Afromowitz M A.Refractive Index of AIx Gal-xAs[J].Solid State Comm,1974,15:59-65.
  • 3Nakamura S.The Blue Laser Diode-GaN Based Light Emitters and Lasers[M].Berlin:Sprinter,1997.
  • 4Liang X X,Wang Z,P,Ban S L.Shallow Impurity States in Ternary Mixed Crystals[J].内蒙古大学学报:自然科学版,1999,30(1):45-52.
  • 5Aldrich C,Bajaj K K.Binding energy of a Mott-Wannier exciton in a polarizable medium[J].Solid State Commun,1977,22(2):157-160.
  • 6McGill S A.Cao K,Foeler W B,et al.Bound-polaron model of cffective-mass binding energies in GaN[J].Phys Rev B,1998,57:8951.
  • 7Yan Z W,Ban S L,Liang X X.Intermediate-coupling polaron properties in wurtzite nitride semiconductors[J].Phys Lett A,2004,326:157.
  • 8Dingle R,Wiegmann D,Henry C H.Energy Specera of tow electrons in a harmonic quantum well[J].Phys Rev Lett,1974,33(3):827-831.
  • 9Mori N,Ando T.Electron-optical-phonon interaction in single and double heterostructurea[J].Phys Rev B,1989,40:6175-6188.
  • 10Liang X X,Wang W.Electron-phonon interaction in a quantum well[J].Phys Rev B,1991,43(6):5155-5158.

二级参考文献64

共引文献17

同被引文献26

  • 1危书义,黄文登.GaN/AlN量子阱中的准受限声子[J].液晶与显示,2005,20(4):309-313. 被引量:6
  • 2赵凤岐,萨茹拉,乌仁图雅.氮化物无限抛物量子阱中极化子能量[J].内蒙古师范大学学报(自然科学汉文版),2005,34(4):426-429. 被引量:7
  • 3刘红霞,周圣明,李抒智,杭寅,徐军,顾书林,张荣.柱状ZnO阵列薄膜的生长及其发光特性[J].物理学报,2006,55(3):1398-1401. 被引量:24
  • 4赵凤岐,色林花,萨茹拉,乌仁图雅.氮化物抛物量子阱中电子-声子相互作用对极化子能量的影响[J].内蒙古师范大学学报(自然科学汉文版),2006,35(4):419-423. 被引量:11
  • 5Gruber T,Kirchner C,Kling R, et al. ZnMgO epilayers and ZnO-ZnMgO quantum wells for optoelectronic apphcatlons m the blue and UV spectral region [J]. ApplPhys Lett,2004,84(26)~5359-5361.
  • 6Nomura K, Ohta H,Ueda K,et al. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semicondu- ctor [J]. Science,2003,300(5623) :1269-1272.
  • 7Ozgur U,Alivov Y I,Liu C,et al. A comprehensive review of ZnO materials and devices [J]. Appl Phys,2005,98(4).. 041301-041301-103.
  • 8Bagnall D M,Chen Y F,Zhu Z, et al. High temperature excitonic stimulated emission from ZnO epitaxial layers [J]. Appl Phys I.ett, 1998,73(8) : 1038-104.
  • 9Lee B C, Kim K V,Stroscio M A. Electron-optical-phonon scattering in wurtzite crystals [J]. Phys Rev B, 1997,56 (3) : 997-1000.
  • 10Bikowski A, Ellmer K. Electrical transport in hydrogen-aluminium Co-doped ZnO and Znl-xMg~O films: Relation to film structure and composition [J]. J Appl Phys, 2013,113 (5) : 053710-053710-6.

引证文献2

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部