摘要
采用经过优化的新型大光腔结构,设计出低发散角的980nm半导体激光器,利用分子束外延系统生长出应变InGaAs量子阱半导体激光器材料,并制作出980nm单模半导体激光器。器件在3μm条宽,750μm腔长时,100mA电流下室温连续输出功率达到70mW以上。激光器的最大斜率效率为0.89W/A.垂直方向远场发散角为28°.器件在250mA工作电流下输出功率达到190mW.器件在70℃温度下仍可以正常工作。
980 nm low divergence semiconductor lasers with optimized large optical cavity （LOC） structure was designed for high power single mode operation.The InGaAs strained quantum well （QW） laser material was grown with solid source molecular beam epitaxy （MBE） system.The high efficiency single mode lasers were fabricated with 3 μm stripe width and 750 μm cavity length.The maximum output power of 70 mW was achieved at 100 mA injection current at room temperature,with the maximum slope efficiency of 0.89 W/A and typical vertical divergent angle of 28°.The output power of the device reached 190 mW under 250 mA current and the device could operate at 70 ℃ reliably.
出处
《兵工学报》
EI
CAS
CSCD
北大核心
2010年第8期1110-1113,共4页
Acta Armamentarii
基金
国家自然科学基金资助项目(60976044)
