摘要
为判定物理气相输运法生长HgI2晶体过程中自由碘的来源,利用平衡气压方程对生长体系中自由碘的形成动力学进行了分析.计算表明,随温度升高,气相体系中的总压增大.在生长温度范围内,HgI2是气相中的主要成分.气相中存在HgI2分解为Hg和I2的反应.对比分解的HgI2分压和总压可知,在约120℃时,体系中HgI2总压高于Hg和I分压约7个数量级,因此HgI2的分解量可以忽略.分析认为,晶体生长传质方式为HgI2分子传输过程.气相中的自由碘主要来源于晶体生长前的补偿碘.
Thermodynamical analysis of HgI2 crystal growth by physical vapour transport was approximately calculated by equilibrium vapor equation for affirming the origin of free iodine during HgI2 crystal growth.The result shows that the gas phase HgI2 is mainly component in vapor system within the growth temperature.The total pressure in vapor system increases with the increase of the temperature.The mainly decomposition can be described by HgI2（g）= Hg（g）＋I2（g）,but the mass decompounded can be ignored,because the partical pressure of HgI2 is higher than seven order magnitude for that of I2 and Hg.Through the discussions on the relation between the partial pressure and total pressure,mass transport in crystal growth from vapour is diffusion of HgI2 molecule,and I-rich in vapor could root in compensation of I2 prior to crystal growth.
出处
《西安工业大学学报》
CAS
2010年第4期345-347,共3页
Journal of Xi’an Technological University
基金
西安应用材料创新基金(XA-AM-200811)
