摘要
利用常规的真空蒸发技术,在热氧化硅片的衬底上制备了不同的衬底温度、蒸发温度和蒸发时间条件下的9,9′-联蒽有机薄膜。用原子力显微镜对制备的9,9′-联蒽薄膜形貌进行了观察,研究了9,9′-联蒽的生长模式,并讨论了其表面形貌及岛状晶核分布与生长条件之间的机理。同时,借助X射线衍射仪分析了薄膜的晶体结构。结果表明,在衬底温度为50℃、蒸发温度为180℃、蒸发时间为60s时能够获得具有良好晶体特性的均匀致密的多晶薄膜,其适合作有机场效应晶体管的有源层。
The 9,9＇-bianthracene was deposited on SiO2 with dry oxidation by routine vacuum evaporation.The surface morphology of the thin films for 9,9＇-bianthracene was investigated by AFM,which was prepared at different substrate temperatures,vapor temperatures and vapor times.The growing model of 9,9＇-bianthracene was studied.The mechanism between surface morphology island distribution and growth condition was discussed.At the same,using the X-ray diffraction analyzed crystal structure. The thin film grown at 50℃ of substrate temperature,180℃ of vapor temperatures and 60s of vapor times has the excellent crystal performance.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2010年第8期1379-1382,共4页
Journal of Functional Materials
基金
国家自然科学基金资助项目(60676033)
兰州交通大学"青蓝"人才工程基金资助项目(QL-08-18A)
关键词
9
9′-联蒽
表面形貌
生长模式
原子力显微镜
9
9＇-bianthracene
surface morphology
growing model
atomic force microscopy
