摘要
用等体积浸渍法制备了一系列ZnS-CdS/SiO2复合半导体硫化物,采用XRD、TPR、UV-vis DRS和连续流动光催化反应对半导体材料的表面结构、能带结构、光吸收性能以及光催化反应性能进行了研究.结果表明:ZnS和CdS在载体表面发生复合作用,形成了CdxZn1-xS复合物,这种复合作用与焙烧温度以及ZnS/CdS比例有关,当煅烧温度为450℃且ZnS/CdS=1时,复合作用最强;ZnS和CdS间的复合效应对半导体材料的能带结构、吸光性能以及光催化性能产生了影响.复合作用越强其光催化CO2和CH4反应性能越高.
A series of supported coupled-semiconductors of sulfide,ZnS-CdS/SiO2,were prepared by incipient wet impregnation.XRD,TPR,UV-vis DRS and photo-stimulated surface reaction technologies were used to investigate the surface structure,photo absorption property and photocatalytic performance of coupled semiconductors.Results show that the chemical action between ZnS and CdS resulted in the formation of CdxZn1-xS compound on the surface of the support.The coupled effects of ZnS and CdS were related with the ratio of ZnS/CdS and calcination temperature.When ZnS/CdS=1 and calcination temperature 450℃,the strongest chemical action between ZnS and CdS can be obtained.It indicates that the coupled effects of ZnS and CdS decrease the energy of band gap,and enhance photo absorption property and photocatalytic performance.
出处
《分子催化》
EI
CAS
CSCD
北大核心
2010年第4期358-362,共5页
Journal of Molecular Catalysis(China)
基金
国家自然科学基金(20806059)
关键词
复合半导体
光催化
硫化锌
硫化镉
Coupled-semiconductors
Photocatalytic
Zinc sulfide
Cadmium sulfide
