摘要
采用红外分析、金相技术及和透射电子显微（ＴＥＭ）技术分析了射频ＰＣＶＤ法沉积氮化硼膜的形成过程。结果表明，在沉积过程中，非晶态氮化硼（ａＢＮ）作为领先相首先按平面方式生长，然后立方氮化硼（ｃＢＮ）在其上成核，并靠沉积原子表面迁移过程而长大，这种过程交替进行的结果，使膜层由ａＢＮ和ｃＢＮ组成。膜层的表面呈层状＋胞状形貌，说明薄膜的生长不仅取决于固体表面的扩散。
The formation process of
boron nitride (BN) films deposited by radio frequency plasma chemical vapor deposition
(PCVD) method has been investigated by using Fourier transform infrared spectroscopy (FTIR),
metalloscope and transmission electron microscopy (TEM) analyses.The result shows that the
films are composed of amorphous BN( a BN) and cubic BN( c BN) phases.As a leading
phase,the amorphous BN formed and grew in a layered structure.Then c BN nucleated on a
BN surface.The growth of c BN was by means of the diffusion,removal and collision of the
adhesive atoms.These growths are replacement process of a BN and c BN.The surface
topography of the films is in layer and spiral patterns.It indicates that the growth of the film
depends on the diffusions of both solid surface atoms and gas elements.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
1999年第2期177-181,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金
关键词
立方氮化硼
薄膜形成
PCVD
超硬材料
形貌
cube boron
nitride ,film formation,PCVD,superhard materials,morphology
