期刊文献+

准分子激光技术发展(邀请论文) 被引量:59

Progress of Excimer Lasers Technology(Invited Paper)
原文传递
导出
摘要 介绍了准分子的基本能级结构、光谱特性及产生激光的激励方式。简要回顾了准分子激光及实用准分子器件的发展历史。着重阐述了放电激励准分子器件的相关技术,如大能量与大功率技术、高重复频率技术、光束控制技术和激光电源技术等。分析了准分子激光光刻应用及近期技术发展,介绍了准分子激光在工业、医疗和生产领域的应用。 The fundamental characteristics of excimer are introduced briefly and the historical development of excimer lasers is reviewed.The progress of excimer technology especially for discharge pumped excimer lasers is presented detailedly.The key technologies recently employed to improve the performance of excimer lasers for lithography are analyzed.The applications of discharge pumped excimer lasers in industry,medicine and scientific research are also discussed.
出处 《中国激光》 EI CAS CSCD 北大核心 2010年第9期2253-2270,共18页 Chinese Journal of Lasers
基金 国家科技重大专项资助课题
关键词 激光器 准分子激光技术 放电激励 光刻 lasers excimer lasers technology discharge pump lithography
  • 相关文献

参考文献121

  • 1D.Basting,U.Stamm.The development of excimer laser technology-history and future prospects [J].International J.Research in Physical Chemistry & Chemical Physics,2001,215(15):75-99.
  • 2D.Basting,K.Pippert,U.Stamm.History and future prospects of excimer lasers[C].SPIE,2002,4426:25-34.
  • 3G.Overton,G.S.Anderson,A.D.Belforte et al..Reviews and forecasts for 2009-2010 global laser market [J].Laser Focus World China,2010,(1):8-14.
  • 4楼祺洪.准分子激光器的发展和应用[J].中国激光,1994,21(5):361-364. 被引量:13
  • 5D.Basting,G.Marowsky.Excimer Laser Technology [M].Germany Berlin:Springer,2005.41-103.
  • 6C.K.Rhodes,C.A.Brau.Excimer Lasers [M].New York:Springer-Verlag,1984.5-42.
  • 7N.G.Basov,V.A.Danilychev,Y.M.Popov et al..Laser operating in vacuum region of spectrum by excitation of liquid xenon with an electron beam [J].Jetp Letters-Ussr,1970,12(10):329-331.
  • 8H.A.Koehler,L.J.Ferderber,D.L.Redhead et al..Stimulated VUV emission in high-pressure xenon excited by high-current relativistic electron-beams [J].Appl.Phys.Lett.,1972,21(5):198-200.
  • 9J.E.Velazco,D.W Setser.Bound-free emission-spectra of diatomic xenon halides [J].J.Chem.Phys.,1975,62(5):1990-1991.
  • 10S.K.Searles,G.A.Hart.Stimulated emission at 281.8 nm from XeBr [J].Appl.Phys.Lett.,1975,27(4):243-245.

二级参考文献153

共引文献197

同被引文献572

引证文献59

二级引证文献238

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部