摘要
采用磁控溅射技术和退火工艺制备出Mg2Si半导体薄膜,研究了退火时间对Mg2Si薄膜的形成和结构的影响。首先在Si(111)衬底上溅射沉积380nmMg膜,然后在退火炉内氩气氛围500℃退火,退火时间分别为3.5h、4.5h、5.0h、5.5h、6.0h。采用X射线衍射和扫描电镜对薄膜的结构和形貌进行了表征。结果表明,采用磁控溅射方法成功地制备了环境友好的半导体Mg2Si薄膜。Mg2Si薄膜具有Mg2Si(220)的择优生长特性,最强衍射峰出现在40.12°位置;随着退火时间的延长,Mg2Si外延薄膜的衍射峰强度先逐渐增强后逐渐减弱,退火5h后,样品的衍射峰最强。Mg2Si晶粒随着退火时间的延长,先逐渐增大,退火5h后逐渐减小。
Semiconducting Mg2 Si films are prepared by magnetron sputtering technique and subsequent annealing. The influence of annealing time on the formation and structure of Mg2 Si films are investigated. 38Onto thickness magnesium films are deposited on Si（111） substrates by magnetron sputtering, and then annealed in annealing furnace under Ar gas atmosphere at 500℃ for 3. 5h,4.5h,5. 0h,5. 5h,6. Oh, respectively. The structural and morphological properties of the obtained films are investigated by the means of X-ray diffraction（XRD） and scanning electron microscopy （SEM）. The results show that Mg2Si films with preferential growth of Mg2Si（220） are prepared successfully by magnetron sputtering technique The strongest diffraction peaks is observed at 40. 12°, and the peak intensity of Mg2Si films increase firstly and then decrease with the increase of annealing time for the Mg2 Si films prepared on Si（111） substrates. The diffraction peak intensity reaches the maximum when the sample is annealed for 5h at 500℃. SEM observations of Mg2 Si films indicate that the grain sizes of films increase firstly with the increase of the annealing time, and then decrease when the sample is annealed over 5h.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2010年第18期5-7,14,共4页
Materials Reports
基金
国家自然科学基金(60766002)
科技部国际合作专项项目(2008DFA52210)
贵州省信息产业厅项目(0831)
贵州省科学技术基金(黔科合J字[2009]2059)
贵阳市科学技术项目([2008]筑科计合同字第15-3号)
关键词
Mg2Si薄膜
择优生长
磁控溅射
退火
Mg2Si films, preferential growth, magnetron sputtering, annealing
