A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices

A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices

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摘要 A new modified method based on the charge pumping technique is proposed and adopted to extract the lateral profiles of oxide charges in an advanced MOSFET. A 0.12 μm SONOS device with 50 nm threshold voltage peak is designed and utilized to demonstrate the proposed method. The trapped charge distribution with a narrow peak can be precisely characterized with this method, which shows good consistency with the measured threshold voltage. A new modified method based on the charge pumping technique is proposed and adopted to extract the lateral profiles of oxide charges in an advanced MOSFET. A 0.12 μm SONOS device with 50 nm threshold voltage peak is designed and utilized to demonstrate the proposed method. The trapped charge distribution with a narrow peak can be precisely characterized with this method, which shows good consistency with the measured threshold voltage.

作者祝鹏潘立阳古海明谯凤英邓宁许军

机构地区 Institute of Microelectronics Tsinghua National Laboratory for Information Science and Technology

出处《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第10期52-56,共5页 半导体学报（英文版）

基金 Project supported by the National Basic Research Program of China(No.2006CB302700) the National Natural Science Foundation of China(No.60876076) the National Key Scientific and Technological Project of China(No.2009ZX02023-5-3)

关键词 charge pumping trapped charge distribution localized VT charge pumping trapped charge distribution localized VT

分类号 TN432 [电子电信—微电子学与固体电子学]

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1Heremans P, Maes H E, Saks N. Evaluation of hot carrier degradation of n-channel MOSFET's with the charge pumping technique. IEEE Electron Device Lett, 1986, EDL-7:428.
2Fair R B, Sun R C. Threshold-voltage instability in MOSFET's due to channel hot-hole emission. IEEE Trans Electron Devices, 1981, ED-28:83.
3Hofmann K R, Werner C, Weber W, et al. Hot-electron and holeemission effects in short n-channel MOSFET's. IEEE Trans Electron Devices, 1985, ED-32:691.
4Tsuchiaki M, Hara H, Morimoto T, et al. A new charge pumping method for determining the spatial distribution of hot-carrierinduced fixed charge in p-MOSFETs. IEEE Trans Electron Devices, 1993, 40:1768.
5Groeseneken G, Maes H E, Beltran N, et al. A reliable approach to charge-pumping Measurements in MOS Transistors. IEEE Trans Electron Devices, 1984, ED-31 : 42.
6Vuillaume D, Marchetaux J C, Boudou A. Evidence of acceptor- like oxide defects created by hot-carrier injection in n-MOSFETs a charge-pumping study. IEEE Trans Electron Devices, 1991, 12: 6O.
7Chen W, Balasinski A, Ma T P. Lateral profiling of oxide charge and interface traps near MOSFET junctions. IEEE Trans Electron Devices, 1993, 40:187.
8Chen C, Ma T P. Direct lateral profiling of both interface traps and oxide charge in thin gate MOSFET devices. IEEE VLSI Technol Syrup, 1996:230.
9Gaitan M, Enlow E W, Russell T J. Accuracy of the charge pumping technique for small geometry MOSFETs. IEEE Trans Nucl Sci, 1989, 36:1990.
10Mahapatra S, Shukuri S, Bude J. CHISEL flash EEPROM. Ⅱ. reliability. IEEE Trans Electron Devices, 2002, 49:1302.

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2半导体物理[J].电子科技文摘,2000(1):22-23.
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5GAO Zhi-xing, ZHANG Hai-feng, TANG Xiu-zhang, XIANG Yi-huai.Excimer Laser Pulse Compress With Pulse Feedback[J].Annual Report of China Institute of Atomic Energy,2008(1):175-175.
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7黄新运,焦广泛,沈忱,曹伟,黄大鸣,李名复.Diagram representations of charge pumping processes in CMOS transistors[J].Journal of Semiconductors,2010,31(8):53-59.
8任迪远,余学锋,陆妩,高文玉,张国强,严荣良.Effects　of　radiation－induced　oxide　and　interface　charges　on　mobility　degradation　in　MOSFETs[J].Nuclear Science and Techniques,1996,7(3):183-186.
9刘晓燕,叶青.CMOS电荷泵的结构设计与分析[J].科学技术与工程,2006,6(13):1793-1797. 被引量：3
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Journal of Semiconductors

2010年第10期

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A novel modified charge pumping method for trapped charge characterization in nanometer-scale devices

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