摘要
因目前MOV型SPD劣化检测参数压敏电压U1mA和漏电流Ileakage不能及时有效地判断MOV劣化程度,故研究一种能考量MOV劣化程度的方法尤其重要。根据影响MOV电容的主要因素以及晶界肖恩特基势垒变化、离子迁移理论等氧化锌压敏电阻的劣化机理,提出了氧化锌压敏电阻劣化过程中必然伴随电容量的变化。在不同的冲击实验下,对MOV型SPD进行劣化实验表明:MOV的电容量均随劣化程度增加而呈现上升趋势;在In标称值冲击下,MOV电容量随冲击次数近似线性上升。通过实验首次提出了电容量增幅具有考量MOV劣化程度的重要意义,同时证明:结合U1mA、Ileakage和电容量3个参数能够更好地分析MOV内部劣化原因。
The degradation degree of MOV can not be estimated timely and efficiently by U1mA and Ileakage which are the detection parameters of MOV-model SPD in the current,therefore,it is critical important for a new method to estimate the degradation degree of MOV.The process of the degradation of ZnO varistors is necessarily companied by capacitance change,according to the major factors of affecting MOV capacitance and the reasons of the degradation of ZnO varistors,such as Schottky barrier change of the grain boundary and the theory of ion migration,etc.It is found that the capacitance of MOV increases with increasing degradation degree by the experiment of degradate MOV-model SPD in different impact tests.In particular,the capacitance of MOV approximately linearly increases with the increasing impact numbers by the experiment under the impact of the In value.The significance of the capacitance growth could estimate the degradation degree of MOV was first proposed by the experiments,and the reasons of the degradation of MOV,based on the combination of the three parameters,U1mA,Ileakage and capacitance was analyzed.
出处
《高电压技术》
EI
CAS
CSCD
北大核心
2010年第9期2167-2172,共6页
High Voltage Engineering
基金
公益性行业科研专项(GYHY200806014)
南京信息工程大学项目(E30JG0730)~~
关键词
氧化锌压敏电阻
晶界
劣化
电容
漏电流
压敏电压
ZnO varistor
grain boundary
degradation
capacitance
leakage current
varistor voltage
