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ZnRh_2O_4电子结构与光学性质的第一性原理计算 被引量:1

First-principles calculations for electronic structure and optical properties of ZnRh_2O_4
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摘要 利用基于密度泛函第一性原理的GGA方法,研究ZnRh2O4的电子结构和光学性质。计算结果表明:ZnRh2O4具有明显的半导体能带结构特征,其带隙宽度为1.084eV,且在费米能级附近的态主要由Rh的4d态构成。ZnRh2O4的静态介电常数为8.215,静态折射率为2.866,介电函数吸收边位于1.0eV附近。在能量为0~8.44eV区域,ZnRh2O4的反射系数随着能量的升高而逐渐增大;随后随能量的增大而逐渐减小;在能量为11.98eV时,达到极小值,然后随能量的增大,再次逐渐增大;在能量为13.762eV时,再次达极大值,随后反射系数陡降;ZnRh2O4的吸收系数的数量级达105cm-1,且吸收主要发生在低能区,其电子能量损失谱的共振峰在14.226eV处,与此能量时反射系数的陡降相对应。 The first-principles calculations were carried out to investigate the electronic structure and optical properties of ZnRh2O4 using the method of the generalized gradient approximation(GGA) based on density functional theory.The results show that the band structure of ZnRh2O4 is a kind of semi-conducting material with wide-band gap of 1.084 eV.Near the Fermi level,Rh 4d is derived bands.The static dielectric constant of ZnRh2O4 is 8.215,and the static refractive index is 2.866.For the imaginary part of dielectric constant,the absorption starts at about 1.0 eV.When the energy is 0-8.44 eV,the reflection index increases with increasing energy,and decreases to the minimum till 11.98 eV,and then increases with the increase of the energy again till 13.762 eV.There is an abrupt reduction when the energy is a little higher than 13.762 eV,which corresponds to the peak of electron energy loss spectrum(EELS).The absorption coefficient is as large as 105 cm-1,and the absorption mainly locates in the low energy region.
出处 《中国有色金属学报》 EI CAS CSCD 北大核心 2010年第8期1623-1628,共6页 The Chinese Journal of Nonferrous Metals
基金 高等学校博士点专项科研基金资助项目(20070533075) 湖南省科技计划资助项目(2009FJ3004)
关键词 ZnRh2O4 电子结构 光学性质 第一性原理 介电常数 反射系数 吸收系数 能量损失 ZnRh2O4 electronic structure optical properties first-principles dielectric function refractive index absorption coefficient energy loss
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  • 1KAWAZOE H,YANAGI H,UEDA K,HOSONO H.Transparent p-type conducting oxides:Design and fabrication of p-n heterojunctions[J].MRS Bulletin,2000,25(8):28-36.
  • 2KADO A,YANAGI H,UEDA K,HOSONO H,KAWAZOE H.Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors[J].Applied Physics Letters,1999,75(18):2851-2853.
  • 3OHTA H,KAWAMURA K I,ORITA M,HIRANO M,SARUKURA N,HOSONO H.Current injection emission from a transparent p-n junction composed of p-SrCu2O2/n-ZnO[J].Applied Physics Letters,2000,77(4):475-477.
  • 4TONOOKA K,BANDO H,AIURA Y.Photovoltaic effect observed in transparent p-n heterojunctions based on oxide semiconductors[J].Thin Solid Films,2003,445(2):327-331.
  • 5OHTA H,NOMURA K,HIRAMATSU H,UEDA K,KAMIYA T,HIRANO M,HOSONO H.Frontier of transparent oxide semiconductors[J].Solid Stated Electronics,2003,47(12):2261-2267.
  • 6MIZOGUCHI H,HIRANO M,FUJITU S,TAKEUCHI T,UEDA K,HOSIONO H.ZnRh2O4:A p-type semiconducting oxide with a valence band composed of a low spin state of Rh3+ in a 4d6 configuration[J].Applied Physics Letters,2002,80(7):1207-1209.
  • 7SINGH D J,RCI R C,MUSFELDT J L,AULUCK S,SINGH N,KHALIFAH P,MCCLURE S,MANDRUS D G.Optical properties and electronic structure of spinel ZnRh2O4[J].Chemistry of Materials,2006,18(11):2696-2700.
  • 8WILSON-SHORT G B,SINGH D J,FORNARI M,SUEWATTANA M.Thermoelectric properties of rhodates:Layered β-SrRh2O4 and spinel ZnRh2O4[J].Physical Review B,2007,75:035121.
  • 9BANERJEE A,SINGH Z.System Zn-Rh-O:heat capacity and Gibbs free energy of formation using differential scanning calorimeter and electrochemical cell[J].Journal of Solid State Electrochemistry,2009,13(8):1201-1207.
  • 10MANSOURIAN-HADAVI N,WANSOM S,PERRY N H,NAGRAJA A R,MASON T O,YE L H,FREEMAN A J.Transport and band structure studies of crystalline ZnRh2O4[J].Physical Review B,2010,81(7):075112.

二级参考文献29

  • 1张勇,唐超群,戴君.锐钛矿TiO_2及其掺Fe所导致的红移现象研究:赝势计算和紫外光谱实验[J].物理学报,2005,54(1):323-327. 被引量:52
  • 2Asahi R,Morikawa T,Ohwaki T,Aoki K,Taga Y 2001 Science 293 269.
  • 3Burda C,Lou Y B,Chen X B 2003 Nano.Letters B 3 1049.
  • 4Perdew J,Burke K,Ernzerhof M 1996 Phys.Rev.Lett.77 3865.
  • 5Sato K,Akai H,Maruyama Y,Minamisono T,Matsuta K,Fukuda M,Mihara M 1999 Hyperfine Interact 56 145.
  • 6Sato K,Akai H,Mamyama Y,Minamisono T,Matsuta K,Fukuda M,Mihara M 1999 Hyperfine Interact 56 145.
  • 7Chunwang Z,Helmersson U,Kall P O 2002 Thin Solid Films 405 50.
  • 8Suhail M H,Mohan T G,Mohan S D C 1992 J.Appl.Phys.71 1421.
  • 9Nagamatsu J, Nakagawa, N, Muranaka T, Zenitani Y, Akimitsu J 2000 Nature 410 63.
  • 10Bud' ko S L, Lapetot G, Petrovic C, Cunningham C E, Anderson N, Canfield P C 2001 Phys. Rev. Lett. 86 1877.

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