摘要
利用ＬＰ－ＭＯＣＶＤ在ＺｎＯ／Ａｌ２Ｏ３衬底上生长了ＧａＮ。实验发现低温生长ＧａＮ过渡层有利于晶体质量的提高；样品ＰＬ谱主峰红移到蓝光区。
It is reported that GaN was grown on ZnO/Al 2O 3 substrate by LP MOCVD, and its characteristics were studied. The experimental results show that the GaN buffer is necessary for improving the quality of GaN epitaxial layer. The main peak of GaN epitaxial layer photoluminescence moves to blue spectrum, which has been confirmed that the diffusion of Zn in ZnO layer into GaN is responsible.
出处
《高技术通讯》
EI
CAS
CSCD
1999年第3期35-38,共4页
Chinese High Technology Letters
基金
国家自然科学基金
