摘要
通过对电极间隙为3mm和8mm半绝缘GaAs光电导开关损伤实验研究发现,引起开关损伤的主要机制是沿面闪络和丝状电流。沿面闪络是在高偏置电压条件下GaAs材料在热传导过程中表现的熔化?再结晶现象,对开关造成了致命性损伤;而丝状电流是开关在非线性工作模式下由于存在负微分电导效应(NDC),形成的高浓度电子?空穴等离子体通道,芯片内产热和冷却之间达到了动态平衡,开关处于光控预击穿状态,存在可恢复性和不可恢复性两类损伤。
Experimental research on semi-insulating（SI） GaAs photoconductive switches with electrode gap 3mm and 8mm found out that surface flashover and filamention are two main damaged mechanisms.Surface flashover is a phenomena that GaAs material takes on melting-recrystallization in the course of heat transfer under strong bias voltage,and it would lead to a fatal injury to switch.Because of negative differential conductivity（NDC） effect,high concentration of electron-hole plasma channel would form filamention under nonlinear mode;the chip is in photo-controlled pre-breakdown state.There are two kind of resumable and unresumable injures.
出处
《电工技术学报》
EI
CSCD
北大核心
2010年第10期129-135,共7页
Transactions of China Electrotechnical Society
基金
国家重点基础研究发展计划(973计划)(2007CB310406)
国家自然科学基金(50837005
10876026)资助项目
关键词
半绝缘GaAs光电导开关
沿面闪络
丝状电流
损伤
Semi-insulating（SI） GaAs photoconductive switch
surface flashover
filamention
injury
