摘要
We investigate the photovoltaic effects of quartz single crystals annealed at high temperatures in ambient atmosphere. The open-circuit photovoltages and surface morphologies strongly depend on the heating treatments. When the annealing temperature increases from room temperature to 900℃, the rms roughness of quartz single crystal wafers increases from 0.207 to 1.011 nm. In addition, the photovoltages decrease from 1.994μV at room temperature to 1.551 μV after treated at 500℃, and then increase up to 9.8μV after annealed at 900℃. The inner mechanism of the present photovoltaic response and surface morphologies is discussed.
We investigate the photovoltaic effects of quartz single crystals annealed at high temperatures in ambient atmosphere. The open-circuit photovoltages and surface morphologies strongly depend on the heating treatments. When the annealing temperature increases from room temperature to 900℃, the rms roughness of quartz single crystal wafers increases from 0.207 to 1.011 nm. In addition, the photovoltages decrease from 1.994μV at room temperature to 1.551 μV after treated at 500℃, and then increase up to 9.8μV after annealed at 900℃. The inner mechanism of the present photovoltaic response and surface morphologies is discussed.
基金
Supported by the New Century Excellent Talent Project of the Ministry of Education of China under Grant No NCET-08-0841, the National Natural Science Foundation of China under Grant Nos 60778034 and 60877038, the Specialized Research Fund for the Doctoral Program of Higher Education （SRFDP） under Grant No 200804250006, Beijing Natural Science Foundation, and State Key Laboratory of Heavy Oil Processing, China University of Petroleum.
