摘要
采用射频磁控反应溅射法在K9玻璃衬底上制备了掺钼氧化铟(Mo:In2O3,IMO)透明导电薄膜,研究了不同沉积温度条件下IMO薄膜的晶体结构、形貌及光电性能。结果表明:不同沉积温度下IMO薄膜均具有(222)择优取向。随着沉积温度的升高,IMO薄膜的载流子浓度增大、载流子迁移率增大、电阻率减小;沉积温度为350℃时,薄膜的最低电阻率为6.9×10-4Ω.cm,载流子浓度为2.15×1020cm-3,迁移率为45 cm2V-1s-1。在可见及近红外区,IMO薄膜的平均透过率大于80%以上。在近红外区,薄膜透过率随沉积温度的升高而增大;在中红外区,由于载流子的吸收,薄膜透过率迅速下降。
The indium oxide films were deposited and doped with molybdenum by RF reactive magnetron sputtering of composite target of high purity In2O3 and Mo,on K9 glass substrates.The impacts of the film growth conditions,such as the deposition temperature,pressure and flow rates of argon and oxygen,on electrical and optical properties of the films were studied.Its microstructures were characterized with X-ray diffraction scanning electron microscopy and conventional optical probes.The results show that the deposition temperature significantly affects properties of the films.For instance,as the deposition temperature rises up,the films,with（222） preferred orientation,have increasingly higher carrier concentration,higher carrier mobility but decreasingly lower resistivity.Its lowest resistivity was 6.9×10-4 Ω·cm.Its average transmittance was found to be 80% in the visible and near infrared region.In near infrared region,its transmittance increases with an increase of the temperature;but its transmittance rapidly drops in mid-infrared region possibly because of the carrier absorption.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2010年第6期676-679,共4页
Chinese Journal of Vacuum Science and Technology
关键词
掺钼氧化铟薄膜
射频磁控反应溅射
电学性能
光学性能
Mo-doped indium oxide thin films Radio frequency reactive magnetron sputtering Electrical properties Optical properties
