摘要
用ＡｒＦ准分子脉冲激光沉积法（ＰＬＤ）在石英玻璃衬底上制备均匀透明的ＳｒＢｉ２Ｔａ２Ｏ９铁电薄膜．紫外透射光谱研究表明在波长为３７０～９００ｎｍ范围薄膜具有很好的透光性，在３２０ｎｍ处有一陡峭的吸收边，由半导体理论计算得到薄膜的禁带宽度为３．２５ｅＶ，ＦＴＩＲ红外光谱研究表明薄膜晶格振动的特征频率约为２．４×１０１３Ｈｚ．
Uniform and transparent SrBi 2Ta 2O 9 films were deposited on the quartz glass substrate using the pulsed ArF laser deposition.The ultraviolet visible optical transmittance of the SBT films indicates that the absorption edge of the energy gap is at about 300nm, and the energy gap of SBT film is about 3.25eV using semiconductor theoretical calculation. The FTIR spectrum of the SBT thin films shows that the lattice vibrational eigen frequency of the thin films is about 2.4×10 13 Hz.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第3期248-252,共5页
Journal of Infrared and Millimeter Waves
基金
国家攀登计划
国家自然科学基金重点项目
上海启明星计划
