摘要
利用台阶仪、扫描电镜（ＳＥＭ）和Ｘ射线双晶衍射仪，研究了线切割硅片和内圆切割硅片的表面切割损伤和损伤层厚度。实验指出线切割硅片表面粗糙度大，外表面损伤大，但损伤层的厚度要小于常规内圆切割硅片。
In this paper,the surface damage and the damdge thickness in line cutting silicon and ID cutting silicon have been studied by means of the technique of Decktak,SEM and X ray double crystal diffraction.The experiment show that the surface in line cutting silicon is rougher than in ID cutting silicon and the surface damage in line cutting silicon is much more than in ID cutting silicon.But the damage thickness in line cutting silicon is smaller than in ID cutting silicon.The possible reasons of the generation of surface damage in line cutting silicon are discussed in this paper also.
出处
《材料科学与工程》
CSCD
1999年第2期55-57,共3页
Materials Science and Engineering
