摘要
基于Zener模型,详细分析了反铁磁性交换作用对(Ga,TM)As(TM=Sc,Ti,V,Cr,Mn,Fe,Co,Ni)居里温度的影响,结果表明,反铁磁性交换作用对n型半导体居里温度的影响程度远远大于对p型半导体居里温度的影响,而且在考虑了反铁磁性交换作用后,除了(Ga,Cr)As和(Ga,Mn)As以外都不可能实现室温铁磁性,(Ga,Cr)As和(Ga,Mn)As的掺杂浓度为13.1%和18%时可获得室温铁磁性,但是反铁磁性交换作用相对强弱增强到y=0.01时,任何掺杂浓度都不能实现室温铁磁性。
Based on Zener Model,the dependences of Curie temperature of DMS materials（Ga,TM）As（TM=Sc,Ti,V,Cr,Mn,Fe,Co,Ni） on the doping concentration and anti-ferromagnetic exchange were discussed in detail by a theoretical computation.The results indicated that the influence of anti-ferromagnetic exchange on the Curie temperature of（Ga,TM）As should not be ignored,and the influence on the Curie temperature of n-type semiconductor is much stronger than that of p-type semiconductor.Considering the influence of the anti-ferromagnetic exchange,ferromagnetism can not obtained in the room temperature for materials except（Ga,Cr）As and（Ga,Mn）As.（Ga,Cr）As and（Ga,Mn）As display the room temperature ferromagnetism as the doping concentration reaches to 13.1% and 18%,respectively.However,when the relative strength increases to the value y=0.01,the materials do not present ferromagnetism anymore in any doping concentration.
出处
《磁性材料及器件》
CSCD
北大核心
2010年第6期25-28,共4页
Journal of Magnetic Materials and Devices
基金
内蒙古工业大学校基金资助项目(X200930)
关键词
稀磁半导体
居里温度
掺杂
反铁磁性交换作用
diluted magnetic semiconductor
Curie temperature
doping
anti-ferromagnetic exchange
